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NTLJF3118N Power MOSFET and Schottky Diode
20 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
Features http://onsemi.com MOSFET
V(BR)DSS RDS(on) Max 65 mW @ 4.5 V 20 V 75 mW @ 2.5 V 120 mW @ 1.8 V ID Max 3.8 A 2.0 A 1.7 A
* WDFN 2x2 mm Package Provides Exposed Drain Pad for * * * * *
Excellent Thermal Conduction Footprint Same as SC-88 Package 1.8 V VGS Rated RDS(on) Low Profile (< 0.8 mm) for Easy Fit in Thin Environments Low VF 2 A Schottky Diode This is a Pb-Free Device
SCHOTTKY DIODE
VR Max 20 V VF Typ 0.41 V IF Max 2.0 A
Applications
* DC-DC Boost/Buck Converter * Low Voltage Hard Disk DC Power Source
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State t5s TA = 25C Steady State TA = 85C TA = 25C PD IDM TJ, TSTG IS TL ID TA = 25C TA = 85C TA = 25C PD TA = 25C 2.2 2.6 1.9 0.7 18 -55 to 150 1.8 260 A C A C A N/C D A Symbol VDSS VGS ID Value 20 12 3.8 2.8 4.6 1.5 W Unit V V A G
D
A
S N-CHANNEL MOSFET
K SCHOTTKY DIODE
MARKING DIAGRAM
1 WDFN6 CASE 506AN JK M G 1 6 2 JK M G 5 G 3 4 = Specific Device Code = Date Code = Pb-Free Package
tp = 10 ms
(Note: Microdot may be in either location)
Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s)
PIN CONNECTIONS
K K G S
1 2
6 5
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 2 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size.
D 3 (Top View) 4
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
(c) Semiconductor Components Industries, LLC, 2006
October, 2006 - Rev. 0
1
Publication Order Number: NTLJF3118N/D
NTLJF3118N
SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Symbol VRRM VR IF Value 20 20 2.0 Unit V V A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - t 5 s (Note 3) Junction-to-Ambient - Steady State Min Pad (Note 4)
Symbol RqJA RqJA RqJA
Max 83 58 177
Unit
C/W
3. Surface Mounted on FR4 Board using 2 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size.
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On-Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = 4.5, ID = 3.8 A VGS = 2.5, ID = 2.0 A VGS = 1.8, ID = 1.7 A Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Forward Diode Voltage Reverse Recovery Time td(ON) tr td(OFF) tf VSD tRR VGS = 0 V, IS =1.0 A TJ = 25C VGS = 4.5 V, VDD = 16 V, ID = 1.0 A, RG = 2.0 W 3.8 4.7 11.1 5.8 0.69 10.2 1.0 V ns ns gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 10 V, ID = 3.8 A VGS = 0 V, f = 1 MHz, VDS = 10 V VDS = 10 V, ID =1.7 A CHARGES, CAPACITANCES AND GATE RESISTANCE 271 72 43 3.7 0.3 0.6 1.0 nC pF VGS = VDS, ID = 250 mA 0.4 0.7 -3.0 37 46 65 4.2 65 75 120 S 1.0 V mV/C mW V(BR)DSS V(BR)DSS/TJ IDSS IGSS VGS = 0 V, ID = 250 mA ID = 250 mA, Ref to 25C VDS = 16 V, VGS = 0 V TJ = 25C TJ = 85C 20 10.4 1.0 10 $100 nA V mV/C mA Symbol Test Conditions Min Typ Max Unit
VDS = 0 V, VGS = 8.0 V
DRAIN-SOURCE DIODE CHARACTERISTICS VGS = 0 V, dISD/dt = 100 A/ms, IS = 1.0 A
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures.
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NTLJF3118N
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Parameter Maximum Instantaneous Forward Voltage Symbol VF Test Conditions IF = 0.1 A IF = 1.0 A IF = 2.0 A Maximum Instantaneous Reverse Current IR VR = 20 V VR = 10 V Symbol VF Test Conditions IF = 0.1 A IF = 1.0 A IF = 2.0 A Maximum Instantaneous Reverse Current IR VR = 20 V VR = 10 V Min Min Typ 0.26 0.35 0.41 0.20 0.045 Max 0.35 0.42 0.52 5.0 1.0 mA Unit V
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85C unless otherwise noted)
Parameter Maximum Instantaneous Forward Voltage Typ 0.18 0.29 0.36 4.9 1.6 mA Max Unit V
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125C unless otherwise noted)
Parameter Maximum Instantaneous Forward Voltage Symbol VF Test Conditions IF = 0.1 A IF = 1.0 A IF = 2.0 A Maximum Instantaneous Reverse Current IR VR = 20 V VR = 10 V Symbol C Test Conditions VR = 5.0 V, f = 1.0 MHz Min Min Typ 0.13 0.25 0.33 42 13 mA Max Unit V
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Parameter Capacitance Typ 52.3 Max Unit pF
ORDERING INFORMATION
Device NTLJF3118NTAG NTLJF3118NTBG Package WDFN6 (Pb-Free) WDFN6 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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NTLJF3118N
TYPICAL N-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
10 ID, DRAIN CURRENT (AMPS) VGS = 4 V to 2.2 V 10 ID, DRAIN CURRENT (AMPS) 2.0 V 1.8 V 8 6 4 TJ = 25C VDS 10 V
8 6 4 2 0
TJ = 25C
1.6 V
1.4 V 1.2 V 0 0.5 1 1.5 2 2.5 3 3.5 4
2 0
TJ = 100C TJ = -55C 1 1.5 2 2.5 VGS, GATE-TO-SOURCE VOLTAGE (V)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 1.0 2.0 3.0 4.0 5.0 6.0 TJ = 25C ID = 3.8 A RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 1 2
Figure 2. Transfer Characteristics
TJ = 25C VGS = 1.8 V
VGS = 2.5 V
VGS = 4.5 V
3
4
5
6
7
8
9
10
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On-Resistance versus Drain Current
Figure 4. On-Resistance versus Drain Current and Gate Voltage
10000 VGS = 0 V
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ID = 3.8 A VGS = 4.5 V IDSS, LEAKAGE (nA)
TJ = 150C
1000
TJ = 100C 100 2
4
6
8
10
12
14
16
18
20
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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NTLJF3118N
TYPICAL N-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 600 500 C, CAPACITANCE (pF) 400 300 200 100 0 10 Crss Ciss VDS = 0 V VGS = 0 V 5 QT 4 3 2 1 0 20 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
16 12 8 4 0
VDS QGS QGD
VGS
Coss
ID = 3.8 A TJ = 25C 0 1 2 3 QG, TOTAL GATE CHARGE (nC) 4
5
VGS
0
VDS
5
10
15
20
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
100 IS, SOURCE CURRENT (AMPS) VDD = 16 V ID = 1.0 A VGS = 4.5 V t, TIME (ns)
Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge
2
VGS = 0 V TJ = 25C
td(off) tf tr td(on)
1.5
10
1
0.5
1
1
10 RG, GATE RESISTANCE (W)
100
0 0.4
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
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NTLJF3118N
TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25C unless otherwise noted)
I F , INSTANTANEOUS FORWARD CURRENT (AMPS) I F, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 10
TJ = 125C TJ = 85C
TJ = 85C 1.0 TJ = 125C TJ = 25C
1.0
TJ = 25C TJ = -55C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.1 0.1
0.1 0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, MAXIMUM FORWARD VOLTAGE (V)
Figure 11. Typical Forward Voltage
Figure 12. Maximum Forward Voltage
1.0E+0 I R , REVERSE CURRENT (AMPS) 100E-3 TJ = 125C 10E-3 TJ = 85C
1.0E+0 I R , MAXIMUM REVERSE CURRENT (AMPS) TJ = 125C 100E-3 10E-3 1.0E-3 TJ = 25C TJ = 85C
1.0E-3 TJ = 25C
100E-6 10E-6
100E-6 10E-6
0
10 VR, REVERSE VOLTAGE (V)
20
0
10 VR, REVERSE VOLTAGE (V)
20
Figure 13. Typical Reverse Current
Figure 14. Maximum Reverse Current
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NTLJF3118N
PACKAGE DIMENSIONS
WDFN6, 2x2 CASE 506AN-01 ISSUE B
D A B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 E E2 e K L J MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 0.57 0.77 2.00 BSC 0.90 1.10 0.65 BSC 0.25 REF 0.20 0.30 0.15 REF
PIN ONE REFERENCE
E
2X
0.10 C
2X
0.10 C
0.10 C
6X
0.08 C D2
6X
L
6X
K
mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
III III III
A3 A1 D2 e
1 3 2X E2 6 6X 4
A
SOLDERING FOOTPRINT*
C
SEATING PLANE 6X 4X
2.30
6X
0.43 1
0.35
0.65 PITCH
b
6X
0.25 B
NOTE 3 2X
J
0.10 C A 0.05 C
BOTTOM VIEW
0.72
1.05
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NTLJF3118N/D

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